BSC340N08NS3GATM MOSFET N-Ch 80V 23A TDSON-8 OptiMOS 3

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QIN XIN (HONG KONG) ELECTRONIC TECHNOLOGY CO.,LIMITED

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Name: BSC340N08NS3GATM MOSFET NCh 80V 23A TDSON8 OptiMOS 3
Brand: Infineon
Price: 1 USD

Brand Name : Infineon

Model Number : BSC340N08NS3GATMA1

MOQ : 5000

Price : Negotiabie

Payment Terms : T/T

Packaging Details : Carton packging

Transistor Polarity : N-Channel

Number of Channels : 1 Channel

Vds - Drain-Source Breakdown Voltage : 80 V

Id - Continuous Drain Current : 23 A

Rds On - Drain-Source Resistance : 34 mOhms

Vgs - Gate-Source Voltage : - 20 V, + 20 V

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MOSFET N-Ch 80V 23A TDSON-8 OptiMOS 3

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	MOSFET
RoHS:	Details
Technology:	Si
Mounting Style:	SMD/SMT
Package / Case:	TDSON-8
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	80 V
Id - Continuous Drain Current:	23 A
Rds On - Drain-Source Resistance:	34 mOhms
Vgs - Gate-Source Voltage:	- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage:	2 V
Qg - Gate Charge:	9.1 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	32 W
Channel Mode:	Enhancement
Tradename:	OptiMOS
Series:	OptiMOS 3
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Infineon Technologies
Configuration:	Single
Fall Time:	2 ns
Forward Transconductance - Min:	8 S
Height:	1.27 mm
Length:	5.9 mm
Product Type:	MOSFET
Rise Time:	3 ns
	5000

BSC340N08NS3GATM MOSFET N-Ch 80V 23A TDSON-8 OptiMOS 3 Images

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